BLF2425M6L180P
BLF2425M6L180P is Power LDMOS transistor manufactured by NXP Semiconductors.
description
180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
PL(AV)
Gp
(MHz)
(m A) (V) (W)
(d B)
28 180
D (%) 53.5
1.2 Features and benefits
- Easy power control
- Integrated ESD protection
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (2400 MHz to 2500 MHz)
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency range such as ISM and industrial heating.
NXP Semiconductors
BLF2425M6L(S)180P
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF2425M6L180P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
BLF2425M6LS180P (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
34...
