BLF2425M7L100
BLF2425M7L100 is Power LDMOS transistor manufactured by NXP Semiconductors.
description
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq VDS PL(AV) Gp D ACPR885k ACPR5M
(MHz)
(m A) (V) (W)
(d B) (%) (d Bc)
(d Bc)
IS-95
2300 to 2400 900 28 20
18 27
- 46[1]
- 1 carrier W-CDMA 2300 to 2400 900 28 30
18.7 33
- - 40[2]
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8
- 13). PAR = 9.7 d B at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 d B at 0.01 % probability on CCDF. Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power amplifiers for industrial and multi carrier applications in the 2300 MHz to 2400 MHz frequency range
NXP Semiconductors
BLF2425M7L(S)100
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF2425M7L100 (SOT502A) 1 drain 2 gate 3 source
BLF2425M7LS100 (SOT502B) 1 drain 2 gate 3 source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic...
