BLF2425M7L100 Description
100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 9.7 dB at 0.01 % probability on the CCDF.
BLF2425M7L100 Key Features
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
BLF2425M7L100 Applications
- 1 carrier W-CDMA 2300 to 2400 900 28 30