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BLF2425M7LS100 - Power LDMOS transistor

Download the BLF2425M7LS100 datasheet PDF. This datasheet also covers the BLF2425M7L100 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Designed for low memory effects providing excellent digital pre-distortion capability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF2425M7L100-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF2425M7LS100 Power LDMOS transistor Ampleon
BLF2425M7LS140 Power LDMOS transistor Ampleon
BLF2425M7LS250P Power LDMOS transistor Ampleon
BLF2425M7L100 Power LDMOS transistor Ampleon
BLF2425M7L140 Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF2425M7LS140 Power LDMOS transistor
BLF2425M7LS250P Power LDMOS transistor
BLF2425M7L100 Power LDMOS transistor
BLF2425M7L140 Power LDMOS transistor
BLF2425M7L250P Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF2425M7L100; BLF2425M7LS100 Power LDMOS transistor Rev. 1 — 6 December 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for industrial applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR885k ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) (dBc) IS-95 2300 to 2400 900 28 20 18 27 46[1] - 1 carrier W-CDMA 2300 to 2400 900 28 30 18.7 33 - 40[2] [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz. [2] 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.