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BLF2425M7LS140 - Power LDMOS transistor

This page provides the datasheet information for the BLF2425M7LS140, a member of the BLF2425M7L140 Power LDMOS transistor family.

Datasheet Summary

Description

140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

Features

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  • High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLF2425M7LS140
Manufacturer NXP
File Size 375.99 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF2425M7LS140 Datasheet
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Full PDF Text Transcription

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BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 mA in a common source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (dB) 18.5 D (%) 52 1.2 Features and benefits http://www.DataSheet4U.
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