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BLF2425M7LS140 Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1.

Typical performance Typical RF performance at Tcase = 25 C;

Key Features

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  • High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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