BLF2425M7LS140 Datasheet | NXP Semiconductors

BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 - 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L140 and BLF2425M7LS140 are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance Typical RF performance at Tcase = 25 C; IDq = 1300 m A in a mon source class-AB production test circuit. Test signal CW f (MHz) 2450 VDS (V) 28 PL(AV) (W) 140 Gp (d B) 18.5 D (%) 52 1.2 Features and benefits http://..net/ - - - - - - - - High efficiency High power gain Excellent ruggedness Excellent thermal stability Integrated ESD protection Designed for broadband operation (2400 MHz to 2500 MHz) Internally matched pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS) 1.3 Applications - Industrial, scientific and medical applications in the frequency range from 2400 MHz to 2500 MHz datasheet pdf - http://..net/ NXP Semiconductors BLF2425M7L(S)140 Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLF2425M7L140 (SOT502A) 1 3 2 2 3 sym112 BLF2425M7LS140 (SOT502B) 1 2 3 drain gate source [1] 1 3 2...