BLF2425M7LS250P Description
250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW applications and are assembled in high performance ceramic packages, available in eared and earless versions Table 1. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
BLF2425M7LS250P Key Features
- High efficiency
- Easy power control
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Designed for broadband operation (2400 MHz to 2500 MHz)
- Internally matched
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances