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BLF2425M9LS30 - Power LDMOS transistor

This page provides the datasheet information for the BLF2425M9LS30, a member of the BLF2425M9L30 Power LDMOS transistor family.

Datasheet Summary

Description

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet preview – BLF2425M9LS30

Datasheet Details

Part number BLF2425M9LS30
Manufacturer NXP
File Size 129.67 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF2425M9LS30 Datasheet
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Full PDF Text Transcription

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BLF2425M9L30; BLF2425M9LS30 Power LDMOS transistor Rev. 1 — 3 June 2015 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 32 30 18.5 D (%) 61 1.
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