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BLF2425M9LS30 Datasheet

Manufacturer: NXP Semiconductors
BLF2425M9LS30 datasheet preview

BLF2425M9LS30 Details

Part number BLF2425M9LS30
Datasheet BLF2425M9LS30 BLF2425M9L30 Datasheet (PDF)
File Size 129.67 KB
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
BLF2425M9LS30 page 2 BLF2425M9LS30 page 3

BLF2425M9LS30 Overview

30 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF2425M9L30 and BLF2425M9LS30 are drivers designed for high power CW applications and are assembled in a high performance ceramic package. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit.

BLF2425M9LS30 Key Features

  • High efficiency
  • High power gain
  • Excellent ruggedness
  • Excellent thermal stability
  • Integrated ESD protection
  • Designed for broadband operation (2400 MHz to 2500 MHz)
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

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