BLF246 Datasheet | NXP Semiconductors

FEATURES - High power gain - Low noise figure - Easy power control - Good thermal stability - Withstands full load mismatch. APPLICATIONS - Large signal amplifier applications in the VHF frequency range. handbook, halfpage PINNING - SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General section of Data Handbook SC19a for further information. 2 3 d g s MAM267 CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION CW, class-B f (MHz) 108 VDS (V) 28 PL (W) 80 Gp (d B) ≥16 ηD (%) ≥55 Fig.1 Simplified outline and symbol. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tamb = 25 °C CONDITIONS - - - - - 65 - MIN. MAX. 65 ±20 13 130 150 200 V V A W UNIT °C °C THERMAL CHARACTERISTICS...