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BLF246 Datasheet Vhf Power Mos Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS.

General Description

drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap.

All leads are isolated from the flange.

A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.

Key Features

  • High power gain.
  • Low noise figure.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

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