BLF246 Description
drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications.
BLF246 Key Features
- High power gain
- Low noise figure
- Easy power control
- Good thermal stability
- Withstands full load mismatch
BLF246 Applications
- Large signal amplifier applications in the VHF frequency range