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BLF246 - VHF power MOS transistor

General Description

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap.

All leads are isolated from the flange.

Key Features

  • High power gain.
  • Low noise figure.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLF246 VHF power MOS transistor Product specification Supersedes data of September 1992 1996 Oct 21 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • High power gain • Low noise figure • Easy power control • Good thermal stability • Withstands full load mismatch. APPLICATIONS • Large signal amplifier applications in the VHF frequency range. handbook, halfpage BLF246 PINNING - SOT121 PIN 1 2 3 4 SYMBOL d s g s DESCRIPTION drain source gate source 1 4 DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121 flange package, with a ceramic cap. All leads are isolated from the flange.