BLF246B Datasheet | NXP Semiconductors

FEATURES - High power gain - Easy power control - Good thermal stability - Gold metallization ensures excellent reliability. APPLICATIONS Large signal applications in the VHF frequency range. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange. PINNING - SOT161A PIN 1 2 3 4 5 6 7 8 DESCRIPTION source source drain 1 gate 1 drain 2 gate 2 source source WARNING Product and environmental safety - toxic materials Fig.1 Simplified outline and symbol. 1 Top view 3 5 7 MBC826 PIN CONFIGURATION andbook, halfpage 8 d2 g2 g1 d1 MBB157 s CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a push-pull mon source test circuit. MODE OF OPERATION CW, class-AB f (MHz) 175 VDS (V) 28 PL (W) 60 Gp (d B) >14 ηD (%) >55 2000 Feb 04 Philips Semiconductors Product specification VHF push-pull power MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS - - - - 65 - MIN. MAX. UNIT Per transistor section unless otherwise specified VDS VGS ID Ptot Tstg Tj drain-source voltage gate-source voltage drain current (DC) storage temperature junction temperature 65 ±20 8 130 +150 200 V V A W °C °C total...