BLF25M612 Overview
12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Typical performance RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
BLF25M612 Key Features
- High efficiency
- High power gain
- Excellent ruggedness
- Excellent thermal stability
- Integrated ESD protection
- Designed for broadband operation (2400 MHz to 2500 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
