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BLF25M612G - Power LDMOS transistor

Download the BLF25M612G datasheet PDF. This datasheet also covers the BLF25M612 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

Description

12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz.

The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package.

Table 1.

Features

  • High efficiency.
  • High power gain.
  • Excellent ruggedness.
  • Excellent thermal stability.
  • Integrated ESD protection.
  • Designed for broadband operation (2400 MHz to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF25M612-NXP.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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BLF25M612; BLF25M612G Power LDMOS transistor Rev. 3 — 16 December 2014 Product data sheet 1. Product profile 1.1 General description 12 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at frequencies from 2400 MHz to 2500 MHz. The BLF25M612 and BLF25M612G are drivers designed for high power CW applications and is assembled in a high performance ceramic package. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f VDS PL(AV) Gp (MHz) (V) (W) (dB) CW 2450 28 12 19 D (%) 60 1.
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