Datasheet4U Logo Datasheet4U.com

BLF543 - UHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range.

The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Easy power control.
  • Good thermal stability.
  • Gold metallization ensures excellent reliability.
  • Designed for broadband operation. 1 2 4 g 6 MBB072 BLF543 PIN.

📥 Download Datasheet

Datasheet preview – BLF543

Datasheet Details

Part number BLF543
Manufacturer NXP
File Size 96.14 KB
Description UHF power MOS transistor
Datasheet download datasheet BLF543 Datasheet
Additional preview pages of the BLF543 datasheet.

📁 Similar Datasheet

  • BLF571 - Power LDMOS transistor (Ampleon)
  • BLF571 - HF / VHF power LDMOS transistor (NXP Semiconductors)
  • BLF573 - Power LDMOS transistor (Ampleon)
  • BLF573 - HF / VHF power LDMOS transistor (NXP Semiconductors)
  • BLF573S - Power LDMOS transistor (Ampleon)
  • BLF573S - HF / VHF power LDMOS transistor (NXP Semiconductors)
  • BLF574 - Power LDMOS transistor (Ampleon)
  • BLF574 - HF / VHF power LDMOS transistor (NXP Semiconductors)
  • BLF574XR - Power LDMOS transistor (Ampleon)
  • BLF574XRS - Power LDMOS transistor (Ampleon)
Other Datasheets by NXP
  • BLF542 - UHF power MOS transistor
  • BLF544 - UHF power MOS transistor
  • BLF544B - UHF push-pull power MOS transistor
  • BLF545 - UHF push-pull power MOS transistor
  • BLF546 - UHF push-pull power MOS transistor
  • BLF547 - UHF push-pull power MOS transistor
  • BLF548 - UHF push-pull power MOS transistor
  • BLF521 - UHF power MOS transistor

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLF543 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures excellent reliability • Designed for broadband operation. 1 2 4 g 6 MBB072 BLF543 PIN CONFIGURATION fpage d DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a VGS indication intended for matched pair applications.
Published: |