BLF578XR Overview
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF578 using NXP's XR process to provide maximum ruggedness capability in the most severe applications without promising the RF performance. Application information Test signal pulsed RF f (MHz) 225 VDS PL (V) (W) 50 1400 Gp (dB) 23.5 D (%) 69 1.2.
BLF578XR Key Features
- Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with
- Output power = 1400 W
- Power gain = 23.5 dB
- Efficiency = 69 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 500 MHz)
BLF578XR Applications
- Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1400 W Power
