BLF642 Overview
A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.
BLF642 Key Features
- CW performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A
- Average output power = 35 W
- Power gain = 19 dB
- Drain efficiency = 63 %
- 2-tone performance at 1300 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 0.2 A
- Average output power = 17.5 W
- Power gain = 19 dB
- Drain efficiency = 48 %
- Intermodulation distortion = 28 dBc
- Integrated ESD protection
