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BLF644P - Broadband power LDMOS transistor

General Description

A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications.

The transistor is suitable for the frequency range HF to 1300 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Key Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Typical performance RF performance at Tcase = 25 C in a common source test circuit. Test signal f VDS PL (MHz) (V) (W) CW, class-A 860 32 100 CW pulsed, class-AB 860 32 100 2-tone, class-AB 860 32 45 860 32 30 Gp (dB) 23 23.5 23 24 D IMD (%) (dBc) 65 66 50 25 40 35 1.