BLF647 Overview
1 2 5 DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLF647 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (HF to 800 MHz)
- Internal input damping for excellent stability over the whole frequency range
BLF647 Applications
- munication transmitter applications in the HF to 800 MHz frequency range
