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BLF647 - UHF power LDMOS transistor

General Description

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in a SOT540A package with ceramic cap.

The common source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 800 MHz).
  • Internal input damping for excellent stability over the whole frequency range.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF647 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 02 2001 Nov 27 Philips Semiconductors Product specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on underside eliminates DC isolators, reducing common mode inductance • Designed for broadband operation (HF to 800 MHz) • Internal input damping for excellent stability over the whole frequency range. APPLICATIONS • Communication transmitter applications in the HF to 800 MHz frequency range.