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BLF647P Datasheet

Broadband Power Ldmos Transistor

Manufacturer: NXP Semiconductors

BLF647P Overview

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

BLF647P Key Features

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLF647P Distributor