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BLF647PS - Broadband power LDMOS transistor

General Description

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications.

The transistor is suitable for the frequency range HF to 1500 MHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Key Features

  • Integrated ESD protection.
  • Excellent ruggedness.
  • High power gain.
  • High efficiency.
  • Excellent reliability.
  • Easy power control.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLF647PS Broadband power LDMOS transistor Rev. 2 — 18 November 2013 Product data sheet 1. Product profile 1.1 General description A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications. Table 1. Application information RF performance at Th = 25 C in a common source test circuit. Test signal f VDS IDq PL(AV) (MHz) (V) (A) (W) Pulsed, class-B 1300 32 0.1 - CW, class-B 1300 32 0.1 200 2-tone, class-AB f1 = 1299.95; f2 = 1300.05 32 0.7 75 PL(M) (W) 200 - Gp (dB) 17.5 17.5 19 D IMD3 (%) (dBc) 70 70 48 33 1.