BLF6G21-10G Description
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit.
- Part: BLF6G21-10G
- Manufacturer: NXP Semiconductors
- Size: 84.66 KB
Similar Part Number
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|---|---|---|
Ampleon |
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