BLF6G21-10G Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLF6G21-10G Power LDMOS transistor Rev. 01 — 11 May 2009 Objective data sheet 1. Product proﬁle 1.

Datasheet Details

Part number	BLF6G21-10G
Manufacturer	NXP Semiconductors
File Size	84.66 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G21-10G_PhilipsSemiconductors.pdf

10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1.

Typical performance IDq = 100 mA;

Tcase = 25 °C in a mon source class-AB production test circuit.

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 0.7 W N Gain = 18.5 dB N Efﬁciency = 15 % N ACPR =.
50 dBc I Typical 1-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 100 mA: N Average output power = 2 W N Gain = 19.3 dB N Efﬁciency = 31 % N ACPR =.
39 dBc I Easy power control I Integrated ESD protection I Excellent rug.

Brand Logo	Part Number	Description	Manufacturer
	BLF6G21-10G	Power LDMOS transistor	Ampleon

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