BLF6G21-10G Overview
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit.
BLF6G21-10G datasheet by NXP Semiconductors.
| Part number | BLF6G21-10G |
|---|---|
| Datasheet | BLF6G21-10G_PhilipsSemiconductors.pdf |
| File Size | 84.66 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS Transistor |
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10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical performance IDq = 100 mA; Tcase = 25 °C in a mon source class-AB production test circuit.
View BLF6G21-10G datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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BLF6G21-10G | Power LDMOS transistor | Ampleon |
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