BLF7G20L-160P
description
160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation CW GSM EDGE f (MHz) 1805 to 1880 1805 to 1880 IDq (m A) 850 850 VDS (V) 28 28 PL(AV) (W) 135 65 Gp (d B) 17.5 18.5 ηD (%) 57 43 ACPR400k (d Bc)
- 61 ACPR600k (d Bc)
- 74 EVMrms (%) 2.5
1.2 Features and benefits
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- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1800 MHz to 2000 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection pliant to Restriction of Hazardous Substances (Ro HS) Directive 2002/95/EC
1.3 Applications
- RF power amplifiers for base stations and multi carrier applications in...
