BLF7G20LS-200 datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLF7G20LS-200 |
|---|---|
| Datasheet | BLF7G20LS-200 BLF7G20L-200 Datasheet (PDF) |
| File Size | 186.21 KB |
| Manufacturer | NXP Semiconductors |
| Description | Power LDMOS transistor |
|
|
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF.
View BLF7G20LS-200 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLF7G20LS-200 | Power LDMOS transistor | Ampleon |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLF7G20LS-160P | Power LDMOS transistor |
| BLF7G20L-160P | Power LDMOS transistor |
| BLF7G20L-200 | Power LDMOS transistor |
| BLF7G22L-250P | Power LDMOS transistor |
| BLF7G22LS-250P | Power LDMOS transistor |
| BLF7G27L-140 | Power LDMOS transistor |
| BLF7G27LS-140 | Power LDMOS transistor |
| BLF0810-180 | Base station LDMOS transistors |
| BLF0810-90 | Base station LDMOS transistors |
| BLF0810S-180 | Base station LDMOS transistors |
