BLF7G20LS-200
description
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 1805 to 1880
IDq (m A) 1620
VDS (V) 28
PL(AV) (W) 55
Gp (d B) 18
ηD (%) 33
ACPR (d Bc)
- 29[1]
Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 d B at 0.01 % probability on CCDF.
1.2 Features and benefits
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- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low-memory effects providing excellent digital pre-distortion capability Internally matched for ease of use Integrated ESD protection pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS)
1.3 Applications
- RF power amplifiers for...
