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BLF7G20LS-200 - Power LDMOS transistor

This page provides the datasheet information for the BLF7G20LS-200, a member of the BLF7G20L-200 Power LDMOS transistor family.

Datasheet Summary

Description

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G20LS-200
Manufacturer NXP
File Size 186.21 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G20LS-200 Datasheet
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www.DataSheet4U.com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 VDS (V) 28 PL(AV) (W) 55 Gp (dB) 18 ηD (%) 33 ACPR (dBc) −29[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.
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