BLF7G20LS-200 Description
200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF.
BLF7G20LS-200 Key Features
- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (180