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BLF7G20LS-200 - Power LDMOS transistor

Download the BLF7G20LS-200 datasheet PDF. This datasheet also covers the BLF7G20L-200 variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (1805 MHz to 1990 MHz) Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF7G20L-200_PhilipsSemiconductors.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
BLF7G20LS-200 Power LDMOS transistor Ampleon
BLF7G20LS-250P Power LDMOS transistor Ampleon
BLF7G20LS-90P Power LDMOS transistor Ampleon
BLF7G20L-200 Power LDMOS transistor Ampleon
BLF7G20L-250P Power LDMOS transistor Ampleon

Other Datasheets by NXP Semiconductors

Part Number Description
BLF7G20LS-160P Power LDMOS transistor
BLF7G20L-160P Power LDMOS transistor
BLF7G20L-200 Power LDMOS transistor
BLF7G22L-250P Power LDMOS transistor
BLF7G22LS-250P Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1805 to 1880 IDq (mA) 1620 VDS (V) 28 PL(AV) (W) 55 Gp (dB) 18 ηD (%) 33 ACPR (dBc) −29[1] Test signal: 3GPP; test model 1; 64 PDPCH; PAR = 8.4 dB at 0.01 % probability on CCDF. 1.