BLF7G22L-250P
description
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 2110 to 2170
IDq (m A) 1900
VDS (V) 28
PL(AV) (W) 70
Gp (d B) 18
ηD (%) 30
ACPR (d Bc)
- 28[1]
Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.5 d B at 0.01 % probability on CCDF.
1.2 Features and benefits
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- Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (Ro HS)
1.3 Applications
- RF power amplifiers for W-CDMA base...
