Part BLF7G22LS-250P
Description Power LDMOS transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 128.56 KB
NXP Semiconductors

BLF7G22LS-250P Overview

Key Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty applications Designed for low memory effects providing excellent pre-distortability Internally matched for ease of use Integrated ESD protection Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
  • RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range