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BLF7G22LS-250P - Power LDMOS transistor

This page provides the datasheet information for the BLF7G22LS-250P, a member of the BLF7G22L-250P Power LDMOS transistor family.

Description

250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness High efficiency Low Rth providing excellent thermal stability Designed for broadband operation (2110 MHz to 2170 MHz) Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF7G22LS-250P
Manufacturer NXP
File Size 128.56 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF7G22LS-250P Datasheet
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www.DataSheet4U.com BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 °C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 2110 to 2170 IDq (mA) 1900 VDS (V) 28 PL(AV) (W) 70 Gp (dB) 18 ηD (%) 30 ACPR (dBc) −28[1] Test signal: 3GPP; test model 1; 1-64 PDPCH; PAR = 7.5 dB at 0.01 % probability on CCDF. 1.
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