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BLF879P Datasheet PDF

NXP Semiconductors BLF879P

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Part No. BLF879P
Datasheet BLF879P Download
Manufacturer
NXP Semiconductors
Description UHF power LDMOS transistor
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BLF879P datasheet page 1 preview

FEATURES AND BENEFITS

● Excellent ruggedness
● Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
● High power gain
● High efficiency
● Designed for broadband operation (470 MHz to 860 MHz)
● Internal input matching for high gain and optimum broadband operation
● Excellent reliability
● Easy power control
● Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3

APPLICATIONS

● Communication transmitter applications in the UHF band
● Industrial applications in the UHF band NXP Semiconductors BLF879P; BLF879PS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin

DESCRIPTION

BLF879P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF879PS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 5 34 [1] 3 5 4 2 sym117 Table 3. Ordering information Type number Package Name

DESCRIPTION

BLF879P - flanged balanced ceramic package; 2 mounting holes; 4 leads BLF879PS - earless flanged balanced ceramic package; 4 leads Version SOT539A SOT539B 4.
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