NXP Semiconductors BLF879P
The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.FEATURES AND BENEFITS
● Excellent ruggedness● Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
● High power gain
● High efficiency
● Designed for broadband operation (470 MHz to 860 MHz)
● Internal input matching for high gain and optimum broadband operation
● Excellent reliability
● Easy power control
● Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3
APPLICATIONS
● Communication transmitter applications in the UHF band● Industrial applications in the UHF band NXP Semiconductors BLF879P; BLF879PS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin
DESCRIPTION
BLF879P (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF879PS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 5 34 [1] 3 5 4 2 sym117 Table 3. Ordering information Type number Package NameDESCRIPTION
BLF879P - flanged balanced ceramic package; 2 mounting holes; 4 leads BLF879PS - earless flanged balanced ceramic package; 4 leads Version SOT539A SOT539B 4.