BLF881 - UHF Power LDMOS Transistor

Product Overview

NXP

Part number	BLF881
Manufacturer	NXP
File Size	243.29 KB
Description	UHF Power LDMOS Transistor
Datasheet	BLF881 Datasheet
Additional preview pages of the BLF881 datasheet.

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications.

The transistor can deliver 140 W from HF to 1 GHz.

The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

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2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Peak envelope power load power = 140 W Power gain = 21 dB Drain efficiency = 49 % Third order intermodulation distortion =.
34 dBc.
DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: Average output power = 33 W Power gain = 21 dB Drain efficiency = 34 % Shoulder distance.

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Published: Jan 18, 2010 |