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BLF881S

Manufacturer: NXP Semiconductors

BLF881S datasheet by NXP Semiconductors.

This datasheet includes multiple variants, all published together in a single manufacturer document.

BLF881S datasheet preview

BLF881S Datasheet Details

Part number BLF881S
Datasheet BLF881S BLF881 Datasheet (PDF)
File Size 243.29 KB
Manufacturer NXP Semiconductors
Description UHF Power LDMOS Transistor
BLF881S page 2 BLF881S page 3

BLF881S Overview

A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from HF to 1 GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications.

BLF881S Key Features

  • 2-Tone performance at 860 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Peak enve
  • DVB performance at 858 MHz, a drain-source voltage VDS of 50 V and a quiescent drain current IDq = 0.5 A: ‹ Average outp
  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain

BLF881S from other manufacturers

View BLF881S datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLF881S Power LDMOS transistor Ampleon
Ampleon Logo BLF881 Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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