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BLF888B Datasheet PDF

NXP Semiconductors BLF888B

The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.
Part No. BLF888B
Datasheet BLF888B Download
Manufacturer
NXP Semiconductors
Description UHF power LDMOS transistor
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BLF888B datasheet page 1 preview

FEATURES AND BENEFITS

● Excellent ruggedness
● Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
● High power gain
● High efficiency
● Designed for broadband operation (470 MHz to 860 MHz)
● Internal input matching for high gain and optimum broadband operation
● Excellent reliability
● Easy power control
● Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC 1.3

APPLICATIONS

● Communication transmitter applications in the UHF band
● Industrial applications in the UHF band NXP Semiconductors BLF888B; BLF888BS UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin

DESCRIPTION

BLF888B (SOT539A) 1 drain1 2 drain2 3 gate1 4 gate2 5 source BLF888BS (SOT539B) 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol 12 1 5 34 [1] 3 5 4 2 sym117 12 1 5 34 [1] 3 5 4 2 sym117 Table 3. Ordering information Type number Package Name

DESCRIPTION

BLF888B - flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads BLF888BS - earless flanged balanced LDMOST ceramic package; 4 leads Version SOT539A SOT539B 4.
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