Datasheet4U Logo Datasheet4U.com

BLF8G27LS-150GV - Power LDMOS transistor

Download the BLF8G27LS-150GV datasheet PDF. This datasheet also covers the BLF8G27LS-150V variant, as both devices belong to the same power ldmos transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Key Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BLF8G27LS-150V-NXP.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30 30[1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Channel bandwidth is 3.84 MHz. 1.