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BLF8G27LS-150GV - Power LDMOS transistor

This page provides the datasheet information for the BLF8G27LS-150GV, a member of the BLF8G27LS-150V Power LDMOS transistor family.

Datasheet Summary

Description

150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth (60 MHz typical).
  • Lower output capacitance for improved performance in Doherty.

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Datasheet Details

Part number BLF8G27LS-150GV
Manufacturer NXP
File Size 195.94 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G27LS-150GV Datasheet
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BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 2600 to 2700 1300 28 45 18 30 30[1] [1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Channel bandwidth is 3.84 MHz. 1.
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