BLF8G27LS-150V
BLF8G27LS-150V is Power LDMOS transistor manufactured by NXP Semiconductors.
BLF8G27LS-150V; BLF8G27LS-150GV
Power LDMOS transistor
Rev. 3
- 26 June 2013
Product data sheet
1. Product profile
1.1 General description
150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Test signal f
IDq
VDS PL(AV) Gp
D ACPR5M
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
2600 to 2700
1300 28 45
18 30
- 30[1]
[1] 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing 5 MHz. Channel bandwidth is 3.84 MHz.
1.2 Features and benefits
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