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BLF8G38LS-75V Datasheet Power Ldmos Transistor

Manufacturer: NXP Semiconductors

BLF8G38LS-75V Overview

BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA...

BLF8G38LS-75V Key Features

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Decoupling leads to enable improved video bandwidth
  • Designed for broadband operation (3400 MHz to 3800 MHz)
  • Lower output capacitance for improved performance in Doherty

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