Datasheet4U Logo Datasheet4U.com

BLF8G38LS-75V - Power LDMOS transistor

Datasheet Summary

Description

75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low thermal resistance providing excellent thermal stability.
  • Decoupling leads to enable improved video bandwidth.
  • Designed for broadband operation (3400 MHz to 3800 MHz).
  • Lower output capacitance for improved performance in Doherty.

📥 Download Datasheet

Datasheet preview – BLF8G38LS-75V

Datasheet Details

Part number BLF8G38LS-75V
Manufacturer NXP
File Size 130.71 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF8G38LS-75V Datasheet
Additional preview pages of the BLF8G38LS-75V datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
BLF8G38LS-75V Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 3400 MHz to 3800 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR5M (MHz) (mA) (V) (W) (dB) (%) (dBc) 1-carrier W-CDMA 3400 to 3800 600 30 20 15.5 26 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. 1.
Published: |