Download BLF9G20LS-160V Datasheet PDF
BLF9G20LS-160V page 2
Page 2
BLF9G20LS-160V page 3
Page 3

BLF9G20LS-160V Description

160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. PAR = 8.4 dB at 0.01 % probability on CCDF;.

BLF9G20LS-160V Key Features

  • Excellent ruggedness
  • High efficiency
  • Low thermal resistance providing excellent thermal stability
  • Excellent broadband performance
  • Lower output capacitance for improved performance in Doherty