Datasheet4U Logo Datasheet4U.com

BLL6H0514-25 - LDMOS Driver Transistor

General Description

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

Key Features

  • I I I I I I I I Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BLL6H0514-25 LDMOS driver transistor Ampleon
BLL6H0514L-130 LDMOS driver transistor Ampleon
BLL6H0514L-130 LDMOS driver transistor NXP Semiconductors
BLL6H0514LS-130 LDMOS driver transistor Ampleon
BLL6H0514LS-130 LDMOS driver transistor NXP Semiconductors

Other Datasheets by NXP Semiconductors

Part Number Description
BLL6H1214L-250 LDMOS L-band Radar Power Transistor
BLL6H1214LS-250 LDMOS L-band Radar Power Transistor
BLL6H1214P2S-250 LDMOS L-band radar power module
BLL1214-250 L-band radar LDMOS transistor
BLL8H0514-25 Power LDMOS transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BLL6H0514-25 LDMOS driver transistor Rev. 02 — 17 March 2009 www.datasheet4u.com Objective data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 25 25 Gp (dB) 21 19 RLin (dB) 10 10 ηD (%) 58 50 Pdroop(pulse) (dB) 0.05 0.05 tr (ns) 8 8 tf (ns) 6 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.