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BLL6H0514-25 - LDMOS Driver Transistor

Datasheet Summary

Description

25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit.

Features

  • I I I I I I I I Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLL6H0514-25
Manufacturer NXP
File Size 88.95 KB
Description LDMOS Driver Transistor
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BLL6H0514-25 LDMOS driver transistor Rev. 02 — 17 March 2009 www.datasheet4u.com Objective data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 25 25 Gp (dB) 21 19 RLin (dB) 10 10 ηD (%) 58 50 Pdroop(pulse) (dB) 0.05 0.05 tr (ns) 8 8 tf (ns) 6 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.
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