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BLL6H1214L-250

Manufacturer: NXP Semiconductors

BLL6H1214L-250 datasheet by NXP Semiconductors.

BLL6H1214L-250 datasheet preview

BLL6H1214L-250 Datasheet Details

Part number BLL6H1214L-250
Datasheet BLL6H1214L-250_NXP.pdf
File Size 168.65 KB
Manufacturer NXP Semiconductors
Description LDMOS L-band Radar Power Transistor
BLL6H1214L-250 page 2 BLL6H1214L-250 page 3

BLL6H1214L-250 Overview

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Test information Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.

BLL6H1214L-250 Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1.2 GHz to 1.4 GHz)
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

BLL6H1214L-250 from other manufacturers

View BLL6H1214L-250 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLL6H1214L-250 LDMOS L-band radar power transistor Ampleon
NXP Semiconductors logo - Manufacturer

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BLL6H1214L-250 Distributor

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