Download BLL6H1214L-250 Datasheet PDF
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BLL6H1214L-250 Description

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Test information Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.

BLL6H1214L-250 Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (1.2 GHz to 1.4 GHz)
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)