Part BLL6H1214L-250
Description LDMOS L-band Radar Power Transistor
Category Transistor
Manufacturer NXP Semiconductors
Size 168.65 KB
NXP Semiconductors
BLL6H1214L-250

Overview

W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

  • Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %:
  • Output power = 250 W
  • Power gain = 17 dB
  • Efficiency = 55 %
  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability