BLL6H1214L-250 - LDMOS L-band Radar Power Transistor

250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit.

• Typical pulsed RF performance at a frequency of 1.2 GHz to 1.4 GHz, a supply voltage of 50 V, an IDq of 100 mA, a tp of 500 μs with δ of 20 %: ‹ Output power = 250 W ‹ Power gain = 17 dB ‹ Efficiency = 55 %.
• Easy power control.
• Integrated ESD protection.
• High flexibility with respect to pulse formats.
• Excellent ruggedness.
• High efficiency.
• Excellent thermal stability.
• Designed for broadband operation (1.2 GHz to 1.4 GHz).