BLL6H1214L-250
BLL6H1214L-250 is LDMOS L-band Radar Power Transistor manufactured by NXP Semiconductors.
BLL6H1214L-250; BLL6H1214LS-250
LDMOS L-band radar power transistor
Rev. 01
- 11 December 2009 Objective data sheet
1. Product profile
1.1 General description
250 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.
Table 1. Test information Typical RF performance at Tcase = 25 °C; tp = 500 μs; δ = 20 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 1.2 to 1.4 VDS (V) 50 PL (W) 250 Gp (dB) 17 ηD (%) 55 tr (ns) 15 tf (ns) 5
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
- Typical pulsed RF performance at a...
