Datasheet Details
| Part number | BLL6H1214P2S-250 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 96.80 KB |
| Description | LDMOS L-band radar power module |
| Datasheet | BLL6H1214P2S-250-NXP.pdf |
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Overview: BLL6H1214P2S-250 LDMOS L-band radar power module Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.
| Part number | BLL6H1214P2S-250 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 96.80 KB |
| Description | LDMOS L-band radar power module |
| Datasheet | BLL6H1214P2S-250-NXP.pdf |
|
|
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250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.
Table 1.
Test information Typical RF performance at Tcase = 25 C;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
BLL6H1214P2S-250 | LDMOS L-band radar power module | Ampleon |
| Part Number | Description |
|---|---|
| BLL6H1214L-250 | LDMOS L-band Radar Power Transistor |
| BLL6H1214LS-250 | LDMOS L-band Radar Power Transistor |
| BLL6H0514-25 | LDMOS Driver Transistor |
| BLL1214-250 | L-band radar LDMOS transistor |
| BLL8H0514-25 | Power LDMOS transistor |
| BLL8H0514L-130 | LDMOS driver transistor |
| BLL8H0514LS-130 | LDMOS driver transistor |
| BLL8H1214L-250 | LDMOS L-band radar power transistor |
| BLL8H1214L-500 | LDMOS L-band radar power transistor |
| BLL8H1214LS-250 | LDMOS L-band radar power transistor |