BLL6H1214P2S-250
BLL6H1214P2S-250 is LDMOS L-band radar power module manufactured by NXP Semiconductors.
description
250 W LDMOS power module intended for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz.
Table 1. Test information Typical RF performance at Tcase = 25 C; tp = 1.8 ms; = 30 %; IDq = 200 m A; Pi = 26 d Bm; in a class-AB production test circuit.
Test signal f (MHz)
VDS PL (V) (W)
Gp add tr tf
(d B) (%) (ns) (ns) pulsed RF
1195 to 1405
45 190 to 290
27 48 15 5
1.2 Features and benefits
- Input/output 50 matched
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (1.2 GHz to 1.4 GHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz
NXP Semiconductors
2. Pinning information
2.1 Pinning
LDMOS L-band radar power module
5)B,1
5)B287 9'6
9- 6 9'6 9- 6
DDD
Top view.
Fig 1. Pin configuration
2.2 Pin description
Table 2. Symbol RF_IN RF_OUT VGS1 VDS1 VGS2 VDS2
Pin description
Pin 1 2 3 4 5 6
Description
RF input RF output gate-source voltage 1 drain-source voltage 1 gate-source voltage 2 drain-source voltage 2
3. Ordering information
Table 3. Ordering information
Type...
