BLL8H0514-25
BLL8H0514-25 is Power LDMOS transistor manufactured by NXP Semiconductors.
description
25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.
Table 1. Application information Typical RF performance at Tcase = 25 C; IDq = 50 m A; in a class-AB application circuit.
Test signal f tp VDS PL Gp RLin D Pdroop(pulse) tr
(MHz)
(s) (%) (V) (W) (d B) (d B) (%) (d B)
(ns) tf (ns) pulsed RF 960 to 1215 128 10 50 25 21 10 58 0.05
1200 to 1400 300 10 50 25 19 10 50 0.05
1.2 Features and benefits
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (0.5 GHz to 1.4 GHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
Simplified outline Graphic symbol
[1]
VP
NXP Semiconductors
Power LDMOS transistor
3. Ordering information
Table 3. Ordering information
Type number Package
Name Description
- flanged ceramic package; 2 mounting holes; 2 leads
Version SOT467C
4. Limiting...
