BLL8H0514L-130
Key Features
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (0.5 GHz to 1.4 GHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications
- Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range NXP Semiconductors BLL8H0514L(S)-130 LDMOS driver transistor
