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BLL8H0514LS-130 Datasheet Ldmos Driver Transistor

Manufacturer: NXP Semiconductors

Overview: BLL8H0514L-130; BLL8H0514LS-130 LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range.

Table 1.

Application information Typical RF performance at Tcase = 25 C;

Key Features

  • Easy power control.
  • Integrated dual side ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (0.5 GHz to 1.4 GHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

BLL8H0514LS-130 Distributor