BLL8H0514LS-130 Description
130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Application information Typical RF performance at Tcase = 25 C; in a class-AB application circuit.
BLL8H0514LS-130 Key Features
- Easy power control
- Integrated dual side ESD protection
- High flexibility with respect to pulse formats
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (0.5 GHz to 1.4 GHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances