BLL8H1214LS-500 Datasheet Ldmos L-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: BLL8H1214L-500; BLL8H1214LS-500 LDMOS L-band radar power transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	BLL8H1214LS-500
Manufacturer	NXP Semiconductors
File Size	204.20 KB
Description	LDMOS L-band radar power transistor
Datasheet	BLL8H1214LS-500 BLL8H1214L-500 Datasheet (PDF)

500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range.

Table 1.

Test information Typical RF performance at Tcase = 25 C;

Easy power control.
Integrated dual side ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (1.2 GHz to 1.4 GHz).
Internally matched for ease of use.
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS) 1.3.

Brand Logo	Part Number	Description	Manufacturer
	BLL8H1214LS-500	LDMOS L-band radar power transistor	Ampleon

Part Number	Description
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