NXP Semiconductors BLP10H603
The BLP10H603 is capable of withstanding a load mismatch corresponding to VSWR = 35 : 1 through all phases under the following conditions: VDS = 50 V; IDq = 15 mA; PL = 2.5 W; f = 860 MHz.| Part No. | BLP10H603 |
|---|---|
| Datasheet | BLP10H603 Download |
| Manufacturer |  NXP Semiconductors |
| Description | Broadband LDMOS driver transistor |
| Buy | Stock & Price |
FEATURES AND BENEFITS
● Easy power control● Integrated ESD protection
● Excellent ruggedness
● High efficiency
● Excellent thermal stability
● Designed for broadband operation (HF to 1400 MHz)
● Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3
APPLICATIONS
● Industrial, scientific and medical applications● Broadcast transmitter applications NXP Semiconductors BLP10H603 Broadband LDMOS driver transistor 2. Pinning information Table 2. Pinning Pin 1, 2, 4, 5, 6, 7, 8, 9, 11, 12 3 10 13
DESCRIPTION
n.c. gate1 drain1 source [1] Connected to flange. 3. Ordering information Simplified outline Graphic symbol [1] 7UDQVSDUHQW WRS YLHZ DDD Table 3. Ordering information Type number Package NameDESCRIPTION
Version BLP10H603 HVSON12 plastic thermal enhanced very thin small outline SOT1352-1 package; no leads; 12 terminals; body 5 6 0.85 mm 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
