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BLP25M705 - Broadband LDMOS driver transistor

General Description

A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

Table 1.

[1] Measured at  = 10 %, tp = 12 s.

Key Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • High power gain.
  • Designed for broadband operation (HF to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BLP25M705 Broadband LDMOS driver transistor Rev. 2 — 9 February 2015 Product data sheet 1. Product profile 1.1 General description A 5 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) Pulsed RF [1] 2450 CW 2450 [1] Measured at  = 10 %, tp = 12 s. IDq (mA) 50 65 VDS PL Gp D (V) (W) (dB) (%) 28 5 15.8 41.4 28 5 16.4 50 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  High power gain  Designed for broadband operation (HF to 2500 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.