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BLP25M710 - Broadband LDMOS driver transistor

Datasheet Summary

Description

A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 2500 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLP25M710
Manufacturer NXP
File Size 86.07 KB
Description Broadband LDMOS driver transistor
Datasheet download datasheet BLP25M710 Datasheet
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BLP25M710 Broadband LDMOS driver transistor Rev. 1 — 29 August 2013 Product data sheet 1. Product profile 1.1 General description A 10 W LDMOS power transistor for broadcast and industrial applications in the HF to 2500 MHz band. Table 1. Application information Test signal f (MHz) IDq (mA) VDS PL Gp (V) (W) (dB) DVB-T 858 110 28 1 20.9 Pulsed RF [3] 2450 80 28 10 16.2 D (%) 17.1 64.5 IMDshldr (dBc) 47.5 [1] - PAR (dB) 9.5 [2] - [1] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [2] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF. [3] Measured at  = 10 %, tp = 12 s. 1.
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