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BLP8G21S-160PV Datasheet Power LDMOS transistor

Manufacturer: NXP Semiconductors

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General Description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Table 1.

Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.

Overview

BLP8G21S-160PV Power LDMOS transistor Rev.

3 — 1 July 2014 Product data sheet 1.

Product profile 1.

Key Features

  • Designed for broadband operation (1880 MHz to 2025 MHz).
  • Decoupling leads to enable improved video bandwidth.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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