BLP8G21S-160PV Datasheet (PDF) Download
NXP Semiconductors
BLP8G21S-160PV

Description

W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Key Features

  • Designed for broadband operation (1880 MHz to 2025 MHz)
  • Decoupling leads to enable improved video bandwidth
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Internally matched for ease of use
  • High power gain
  • Integrated ESD protection
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)