Datasheet4U Logo Datasheet4U.com

BLP8G21S-160PV - Power LDMOS transistor

Description

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Table 1.

Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Designed for broadband operation (1880 MHz to 2025 MHz).
  • Decoupling leads to enable improved video bandwidth.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Internally matched for ease of use.
  • High power gain.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLP8G21S-160PV

Datasheet Details

Part number BLP8G21S-160PV
Manufacturer NXP
File Size 126.46 KB
Description Power LDMOS transistor
Datasheet download datasheet BLP8G21S-160PV Datasheet
Additional preview pages of the BLP8G21S-160PV datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq VDS PL(AV) Gp D ACPR (MHz) (mA) (V) (W) (dB) (%) (dBc) 2-carrier W-CDMA 1880 to 1920 600 28 20 17.5 31 30 [1] [1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF; carrier spacing = 5 MHz. 1.
Published: |