BLP8G21S-160PV - Power LDMOS transistor

Product Overview

NXP

Part number	BLP8G21S-160PV
Manufacturer	NXP
File Size	126.46 KB
Description	Power LDMOS transistor
Datasheet	BLP8G21S-160PV Datasheet
Additional preview pages of the BLP8G21S-160PV datasheet.

160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.

Designed for broadband operation (1880 MHz to 2025 MHz).
Decoupling leads to enable improved video bandwidth.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Internally matched for ease of use.
High power gain.
Integrated ESD protection.
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Published: Mar 7, 2016 |