BLS6G2731S-120 Datasheet | NXP Semiconductors

description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 120 Gp (d B) 13.5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 d B N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I pliant to Directive 2002/95/EC, regarding restriction of hazardous substances (Ro HS) .. NXP Semiconductors BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor 1.3 Applications I S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline Graphic symbol BLS6G2731-120 (SOT502A) 1 3 2 2 3 sym112 BLS6G2731S-120 (SOT502B) 1 2 3 drain gate source [1] 1 3 2 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLS6G2731-120 Description Version flanged LDMOST ceramic package; 2 mounting holes; SOT502A 2 leads earless flanged LDMOST ceramic package; 2 leads SOT502B Type number - 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage...