BLS6G2731S-120 Description
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.
- Part: BLS6G2731S-120
- Manufacturer: NXP Semiconductors
- Size: 112.86 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Ampleon |
BLS6G2731S-120 | LDMOS S-band radar power transistor |