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BLS6G2731S-120 - LDMOS S-band Radar Power Transistor

This page provides the datasheet information for the BLS6G2731S-120, a member of the BLS6G2731-120 LDMOS S-band Radar Power Transistor family.

Description

120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 100 µs with δ of 10 %: N Output power = 120 W N Power gain = 13.5 dB N Efficiency = 48 % I Easy power control I Integrated ESD protection I High flexibility with respect to pulse formats I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (2.7 GHz to 3.1 GHz) I Internally matched for ease of use I Compliant to Directive 2002/.

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Datasheet Details

Part number BLS6G2731S-120
Manufacturer NXP
File Size 112.86 KB
Description LDMOS S-band Radar Power Transistor
Datasheet download datasheet BLS6G2731S-120 Datasheet
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www.DataSheet4U.com BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 100 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 120 Gp (dB) 13.5 ηD (%) 48 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Typical pulsed RF performance at a frequency of 2.7 GHz to 3.
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