BLS6G2731S-130 Datasheet | NXP Semiconductors

description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 m A; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (d B) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits - Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 m A, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power gain = 12.5 d B ‹ Efficiency = 47 % - Easy power control - Integrated ESD protection - High flexibility with respect to pulse formats - Excellent ruggedness - High efficiency - Excellent thermal stability - Designed for broadband operation (2.7 GHz to 3.1 GHz) - Internally matched for ease of use - pliant to Restriction of Hazardous Substances (Ro HS) Directive 2002/95/EC 1.3 Applications - S-band power amplifiers for radar applications in the 2.7 GHz to 3.1 GHz frequency range .. NXP Semiconductors LDMOS S-band radar power transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLS6G2731S-130 Description ceramic earless flanged cavity package; 2 leads Version SOT922-1 Type number 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Min - 0.5 - 65 Max 60 +13 33 +150 200 Unit V V A °C °C 5. Thermal characteristics Table 5. Zth(j-mb) Thermal characteristics Conditions Tcase = 85 °C; PL = 130...