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BLS6G2731S-130

Manufacturer: NXP Semiconductors

BLS6G2731S-130 datasheet by NXP Semiconductors.

BLS6G2731S-130 datasheet preview

BLS6G2731S-130 Datasheet Details

Part number BLS6G2731S-130
Datasheet BLS6G2731S-130_PhilipsSemiconductors.pdf
File Size 243.93 KB
Manufacturer NXP Semiconductors
Description LDMOS S-band radar power transistor
BLS6G2731S-130 page 2 BLS6G2731S-130 page 3

BLS6G2731S-130 Overview

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Typical performance Typical RF performance at Tcase = 25 °C; in a class-AB production test circuit.

BLS6G2731S-130 Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (2.7 GHz to 3.1 GHz)
  • Internally matched for ease of use
  • pliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
NXP Semiconductors logo - Manufacturer

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BLS6G2731S-130 Distributor

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