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BLS6G2731S-130 - LDMOS S-band radar power transistor

Description

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit.

Features

  • Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: ‹ Output power = 130 W ‹ Power gain = 12.5 dB ‹ Efficiency = 47 %.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (2.7 GHz to 3.1 GHz).

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Datasheet Details

Part number BLS6G2731S-130
Manufacturer NXP
File Size 243.93 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS6G2731S-130 Datasheet
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www.DataSheet4U.com BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits „ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.
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