BLS6G2731S-130 Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

Overview: .. BLS6G2731S-130 LDMOS S-band radar power transistor Rev. 01 — 26 July 2010 Objective data sheet 1. Product profile 1.

Datasheet Details

Part number	BLS6G2731S-130
Manufacturer	NXP Semiconductors
File Size	243.93 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2731S-130_PhilipsSemiconductors.pdf

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Table 1.

Typical performance Typical RF performance at Tcase = 25 °C;

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2.7 GHz to 3.1 GHz).

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