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BLS6G2735L-30

Manufacturer: NXP Semiconductors

BLS6G2735L-30 datasheet by NXP Semiconductors.

BLS6G2735L-30 datasheet preview

BLS6G2735L-30 Datasheet Details

Part number BLS6G2735L-30
Datasheet BLS6G2735L-30-NXP.pdf
File Size 681.75 KB
Manufacturer NXP Semiconductors
Description S-band LDMOS transistor
BLS6G2735L-30 page 2 BLS6G2735L-30 page 3

BLS6G2735L-30 Overview

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Application information Typical RF performance at Tcase = 25 C;.

BLS6G2735L-30 Key Features

  • Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operat

BLS6G2735L-30 from other manufacturers

View BLS6G2735L-30 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLS6G2735L-30 S-band LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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