BLS6G2735LS-30 datasheet by NXP Semiconductors.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | BLS6G2735LS-30 |
|---|---|
| Datasheet | BLS6G2735LS-30 BLS6G2735L-30 Datasheet (PDF) |
| File Size | 681.75 KB |
| Manufacturer | NXP Semiconductors |
| Description | S-band LDMOS transistor |
|
|
30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Application information Typical RF performance at Tcase = 25 C;.
View BLS6G2735LS-30 datasheet index
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
BLS6G2735LS-30 | S-band LDMOS transistor | Ampleon |
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLS6G2735L-30 | S-band LDMOS transistor |
| BLS6G2731-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-130 | LDMOS S-band radar power transistor |
| BLS6G2933P-200 | LDMOS S-Band radar pallet amplifier |
| BLS2731-10 | Microwave power transistor |
| BLS2731-110 | Microwave power transistor |
| BLS2731-20 | Microwave power transistor |
| BLS2731-50 | Microwave power transistor |
| BLS2933-100 | Microwave power LDMOS transistor |
