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BLS6G2735LS-30 - S-band LDMOS transistor

This page provides the datasheet information for the BLS6G2735LS-30, a member of the BLS6G2735L-30 S-band LDMOS transistor family.

Description

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Table 1.

Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA.

Features

  • Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS6G2735LS-30
Manufacturer NXP
File Size 681.75 KB
Description S-band LDMOS transistor
Datasheet download datasheet BLS6G2735LS-30 Datasheet
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Full PDF Text Transcription

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BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 50 mA. Test signal f (GHz) pulsed RF pulsed RF pulsed RF 3.1 to 3.5 2.7 to 3.3 2.7 to 3.5 VDS (V) 32 32 32 PL (W) 30 35 30 Gp (dB) 13 14 12 D (%) 50 50 47 tr (ns) 20 20 20 tf (ns) 10 10 10 Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz 1.
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