BLS6G2933P-200 datasheet by NXP Semiconductors.
| Part number | BLS6G2933P-200 |
|---|---|
| Datasheet | BLS6G2933P-200_PhilipsSemiconductors.pdf |
| File Size | 130.45 KB |
| Manufacturer | NXP Semiconductors |
| Description | LDMOS S-Band radar pallet amplifier |
|
|
200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB test circuit. Mode of operation f (GHz) class-AB;.
View all NXP Semiconductors datasheets
| Part Number | Description |
|---|---|
| BLS6G2731-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-130 | LDMOS S-band radar power transistor |
| BLS6G2735L-30 | S-band LDMOS transistor |
| BLS6G2735LS-30 | S-band LDMOS transistor |
| BLS2731-10 | Microwave power transistor |
| BLS2731-110 | Microwave power transistor |
| BLS2731-20 | Microwave power transistor |
| BLS2731-50 | Microwave power transistor |
| BLS2933-100 | Microwave power LDMOS transistor |
