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BLS7G2325L-105

Manufacturer: NXP Semiconductors

BLS7G2325L-105 datasheet by NXP Semiconductors.

BLS7G2325L-105 datasheet preview

BLS7G2325L-105 Datasheet Details

Part number BLS7G2325L-105
Datasheet BLS7G2325L-105-NXP.pdf
File Size 121.61 KB
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
BLS7G2325L-105 page 2 BLS7G2325L-105 page 3

BLS7G2325L-105 Overview

105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) Pulse CW 2300 to 2500 900 30 110 16.5 55 1.2.

BLS7G2325L-105 Key Features

  • Excellent ruggedness
  • High efficiency
  • Low Rth providing excellent thermal stability
  • Internally matched for ease of use
  • Integrated ESD protection
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

BLS7G2325L-105 from other manufacturers

View BLS7G2325L-105 datasheet index

Brand Logo Part Number Description Other Manufacturers
Ampleon Logo BLS7G2325L-105 Power LDMOS transistor Ampleon
NXP Semiconductors logo - Manufacturer

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BLS7G2325L-105 Distributor

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