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BLS7G2325L-105 - Power LDMOS transistor

Datasheet Summary

Description

105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Features

  • Excellent ruggedness.
  • High efficiency.
  • Low Rth providing excellent thermal stability.
  • Internally matched for ease of use.
  • Integrated ESD protection.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS7G2325L-105
Manufacturer NXP
File Size 121.61 KB
Description Power LDMOS transistor
Datasheet download datasheet BLS7G2325L-105 Datasheet
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BLS7G2325L-105 Power LDMOS transistor Rev. 2 — 19 July 2011 Product data sheet 1. Product profile 1.1 General description 105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f IDq VDS PL(AV) Gp D (MHz) (mA) (V) (W) (dB) (%) Pulse CW 2300 to 2500 900 30 110 16.5 55 1.2 Features and benefits  Excellent ruggedness  High efficiency  Low Rth providing excellent thermal stability  Internally matched for ease of use  Integrated ESD protection  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
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