BLS7G2325L-105
description
105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a mon source class-AB production test circuit.
Mode of operation f
IDq
PL(AV)
Gp
D
(MHz)
(m A) (V)
(W)
(d B) (%)
Pulse CW
2300 to 2500 900 30 110
16.5 55
1.2 Features and benefits
- Excellent ruggedness
- High efficiency
- Low Rth providing excellent thermal stability
- Internally matched for ease of use
- Integrated ESD protection
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- RF power amplifiers for S-band radar applications in the 2300 MHz to 2500 MHz frequency range
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3
Pinning Description drain gate source
[1] Connected to flange.
3. Ordering information
Simplified outline Graphic symbol
11 3
[1] 22 3 sym112
Table 3....
