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BLS7G2729L-350P - LDMOS S-band radar power transistor

Datasheet Summary

Description

350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for S-band operation (2.7 GHz to 2.9 GHz).
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

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Datasheet Details

Part number BLS7G2729L-350P
Manufacturer NXP
File Size 134.18 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS7G2729L-350P Datasheet
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BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f VDS PL Gp D tr tf (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 2.7 to 2.9 32 350 13 50 8 5 1.2 Features and benefits  High efficiency  Excellent ruggedness  Designed for S-band operation (2.7 GHz to 2.
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