Datasheet Details
| Part number | BLS7G2729L-350P |
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| Manufacturer | NXP Semiconductors |
| File Size | 134.18 KB |
| Description | LDMOS S-band radar power transistor |
| Datasheet |
 BLS7G2729L-350P Datasheet
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General Description
350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 200 mA; in a class-AB production test circuit.
Key Features
- High efficiency.
- Excellent ruggedness.
- Designed for S-band operation (2.7 GHz to 2.9 GHz).
- Excellent thermal stability.
- Easy power control.
- Integrated ESD protection.
- High flexibility with respect to pulse formats.
- Internally matched for ease of use.
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.