Datasheet4U Logo Datasheet4U.com

BLS7G2730L-200P - LDMOS S-band radar power transistor

Datasheet Summary

Description

200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.

Table 1.

Typical performance Typical RF performance at Tcase = 25 C.

Features

  • High efficiency.
  • Excellent ruggedness.
  • Designed for broadband operation.
  • Excellent thermal stability.
  • Easy power control.
  • Integrated ESD protection.
  • High flexibility with respect to pulse formats.
  • Internally matched for ease of use.
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLS7G2730L-200P

Datasheet Details

Part number BLS7G2730L-200P
Manufacturer NXP
File Size 177.01 KB
Description LDMOS S-band radar power transistor
Datasheet download datasheet BLS7G2730L-200P Datasheet
Additional preview pages of the BLS7G2730L-200P datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7 to 3.0 32 pulsed RF [3] 2.9 to 3.1 32 [1] tp = 300 s;  = 10 %; IDq = 100 mA [2] tp = 3000 s;  = 20 %; IDq = 50 mA [3] tp = 500 s;  = 20 %; IDq = 50 mA PL Gp (W) (dB) 200 12 220 12.5 220 12.5 D tr (%) (ns) 48 8 50 20 50 20 tf (ns) 5 6 6 1.
Published: |