BLS7G2730L-200P Overview
BLS7G2730L-200P; BLS7G2730LS-200P LDMOS S-band radar power transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General 200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C. Test signal f VDS (GHz) (V) Class-AB production test circuit pulsed RF [1] 2.7 to 3.0 32 Application circuit pulsed RF [2] 2.7...
BLS7G2730L-200P Key Features
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
