BLS7G2730L-200P
BLS7G2730L-200P is LDMOS S-band radar power transistor manufactured by NXP Semiconductors.
description
200 W LDMOS power transistor for S-band radar applications in the frequency range from 2700 MHz to 3000 MHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C.
Test signal f
(GHz)
(V)
Class-AB production test circuit pulsed RF [1]
2.7 to 3.0
Application circuit pulsed RF [2]
2.7 to 3.0
32 pulsed RF [3]
2.9 to 3.1
[1] tp = 300 s; = 10 %; IDq = 100 m A [2] tp = 3000 s; = 20 %; IDq = 50 m A [3] tp = 500 s; = 20 %; IDq = 50 m A
PL Gp (W) (d B)
200 12
220 12.5 220 12.5
D tr (%) (ns)
48 8
50 20 50 20 tf (ns)
6 6
1.2 Features and benefits
- High efficiency
- Excellent ruggedness
- Designed for broadband operation
- Excellent thermal stability
- Easy power control
- Integrated ESD protection
- High flexibility with respect to pulse formats
- Internally matched for ease of use
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- S-band radar applications in the frequency range 2700 MHz to 3000 MHz
NXP Semiconductors
BLS7G2730L(S)-200P
LDMOS S-band radar power...
