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BLS7G3135L-350P Datasheet Ldmos S-band Radar Power Transistor

Manufacturer: NXP Semiconductors

BLS7G3135L-350P Overview

BLS7G3135L-350P; BLS7G3135LS-350P LDMOS S-band radar power transistor Rev. 3 — 29 October 2013 Product data sheet 1. Product profile 1.1 General 350 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 300 s;  = 10 %; IDq = 200 mA; in a class-AB production test circuit. Test signal f (GHz) VDS PL Gp D (V) (W) (dB) (%) tr tf (ns)...

BLS7G3135L-350P Key Features

  • Easy power control
  • Integrated ESD protection
  • High flexibility with respect to pulse formats
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (3.1 GHz to 3.5 GHz)
  • Internally matched for ease of use
  • pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

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